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| Product Description The SGA-6586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/ 95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Gain & Return Loss vs. Freq. @TL=+25C GAIN SGA-6586 SGA-6586Z Pb RoHS Compliant & Green Package DC-4000 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features * Now available in Lead Free, RoHS Compliant, & Green Packaging * High Gain : 18.4 dB at 1950 MHz * Cascadable 50 Ohm * Operates From Single Supply * Low Thermal Resistance Package 32 0 24 -10 IRL ORL Return Loss (dB) Gain (dB) Applications * * * * PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 16 -20 8 0 0 1 2 3 Frequency (GHz) 4 5 -30 -40 Symbol G Parameter Small Si gnal Gai n U nits dB dB dB dB m dB m dB m dB m MHz dB dB dB V mA C /W Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. Typ. 23.8 18.4 16.7 21.5 19.0 33.8 32.2 2500 Max. P 1dB OIP3 Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt Bandwi dth D etermi ned by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) VS = 8 V RBIAS = 39 Ohms 1950 MHz 1950 MHz 1950 MHz 4.5 72 21.4 18.0 3.1 4.9 80 97 5.3 88 Test Conditions: ID = 80 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101160 Rev. D SGA-6586 DC-4000 MHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 Frequency Frequency (MHz) Frequency (MHz)(MHz) 500 850 1950 2400 3500 G OIP3 P 1dB IRL ORL S 12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 8 V VS = 8 V RBIAS = 39 Ohms RBIAS = 39 Ohms dB dB m dB m dB dB dB dB = 80 mA Typ. IID = 80 mA Typ. D T = 25C TLL = 25C 25.8 32.2 20.9 32.2 16.8 24.0 23.3 18.2 23.9 2.5 23.8 33.8 21.5 22.8 23.0 23.6 2.7 18.4 32.2 18.0 21.4 18.0 21.2 3.1 16.7 30.2 16.8 17.4 17.4 19.7 3.7 14.4 14.2 16.6 Test Conditions: OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Absolute Maximum Ratings Noise Figure vs. Frequency VD= 4.9 V, ID= 80 mA 5 Noise Figure (dB) 4 3 2 Parameter Max. D evi ce C urrent (ID) Max. D evi ce Voltage (VD) Max. RF Input Power Max. Juncti on Temp. (TJ) Operati ng T mp. Range (TL) e Absolute Limit 160 mA 7V +16 dBm +150C -40C to +85C +150C Max. Storage Temp. TL=+25C 1 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page one. Bi as C ondi ti ons should also sati sfy the followi ng expressi on: IDVD < (TJ - TL) / RTH, j-l T ke i nto account out of band VSWR presented by devi ces a such as SAW fi lters to determi ne maxi mum RF i nput power. Reflected harmoni c levels i n saturati on are si gni fi cant. OIP3 vs. Frequency VD= 4.9 V, ID= 80 mA 40 35 OIP3 (dBm) P1dB vs. Frequency VD= 4.9 V, ID= 80 mA 24 22 P1dB (dBm) 20 30 25 TL=+25C 18 16 14 TL=+25C 20 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101160 Rev. D SGA-6586 DC-4000 MHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency 21 |S | vs. Frequency 11 VD= 4.9 V, ID= 10 mA (Typ.) 32 24 S21(dB) S11(dB) 0 VD= 4.9 V, ID= 80 mA -10 16 8 -20 TL 0 0 1 2 3 Frequency (GHz) 4 +25C -40C +85C -30 TL -40 +25C -40C +85C 5 0 1 2 3 Frequency (GHz) 4 5 |S | vs. Frequency 12 |S | vs. Frequency 22 0 -10 S12(dB) -20 -30 VD= 4.9 V, ID= 80 mA 0 -10 S22(dB) -20 -30 VD= 4.9 V, ID= 80 mA TL -40 0 1 2 3 Frequency (GHz) 4 +25C -40C +85C TL -40 5 0 1 2 3 Frequency (GHz) 4 +25C -40C +85C 5 NOTE: Full S-parameter data available at www.sirenza.com 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101160 Rev. D SGA-6586 DC-4000 MHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit R BIAS Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 VS 1 uF 1000 pF CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 4 1 SGA-6586 3 2 CB RF out Recommended Bias Resistor Values for ID=80mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 6V 13 8V 39 10 V 62 12 V 91 VS RBIAS Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. LC CD CB A65 CB Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. Part Identification Marking 3 3 2, 4 GND 4 A65 1 2 4 65Z 1 2 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information P N m er art u b RS eel ize D evices/R eel See Application Note AN-075 for Package Outline Drawing SA G -6586 SA G -6586Z 13" 13" 3000 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101160 Rev. D |
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